Datasheet Summary
April 1995
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE
Features
- 12A, 600V
- Latch Free Operation
- Typical Fall Time <500ns
- Low Conduction Loss
- With Anti-Parallel Diode
- tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR <...