Datasheet Summary
September 1995
Radiation Hardened 8K x 8 CMOS PROM
Pinouts
Features
- 1.2 Micron Radiation Hardened Bulk CMOS
- Total Dose 3 x 10 RAD (Si)
- Transient Output Upset >5 x 108 RAD (Si)/s
- LET >100 MEV-cm2/mg
- Fast Access Time
- 35ns (Typical)
- Single 5V Power Supply
- Single Pulse 10V Field Programmable
- Synchronous Operation
- On-Chip Address Latches
- Three-State Outputs
- NiCr Fuses
- Low Standby Current <500µA (Pre-Rad)
- Low Operating Current <15mA/MHz
- Military Temperature Range -55 oC
28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW
NC 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 DQ0 11 DQ1 12 DQ2 13 GND 14 28 VDD 27 P † 26 NC 25 A8 24...