Datasheet Summary
Data Sheet
June 2000
File Number
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management...
