IRF350 Datasheet | Intersil

Data Sheet March 1999 File Number 1826.3 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA9399. Features - 15A, 400V - rDS(ON) = 0.300Ω - Single Pulse Avalanche Energy Rated - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Related...