RFD16N06SM Datasheet | Intersil

Semiconductor RFD16N06, RFD16N06SM 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. September 1998 Features - 16A, 60V - rDS(ON) = 0.047Ω - Temperature pensating PSPICE Model - Peak Current vs Pulse Width Curve - UIS...