Datasheet Summary
RFG60P03, RFP60P03, RF1S60P03SM
Data Sheet July 1999 File Number
60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs
These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49045.
Features
- 60A, 30V
- rDS(ON) = 0.027Ω
- Temperature pensating PSPICE® Model
- Peak Current vs Pulse Width...
