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ASDX005 - 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT

Download the ASDX005 datasheet PDF. This datasheet also covers the ASDXxxx variant, as both devices belong to the same 0 to 1 psi through 0 to 100 psi pressure transducers sensym ict family and are provided as variant models within a single manufacturer datasheet.

General Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Key Features

  • RDS(on) = 0.330Ω ( Typ. )@ VGS = 10V, ID = 4.5A.
  • Ultra Low Gate Charge (Typ. Qg = 17.8nC).
  • Low Effective Output Capacitance.
  • 100% Avalanche Tested.
  • RoHS Compliant SupreMOSTM February 2010.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ASDXxxx_ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ASDX005
Manufacturer Invensys
File Size 104.43 KB
Description 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
Datasheet download datasheet ASDX005 Datasheet

📁 Similar Datasheet

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ASDXxxx 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT ETC
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Other Datasheets by Invensys

Part Number Description
ASDX001 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
ASDX015 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
ASDX030 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT
ASDX100 0 TO 1 PSI THROUGH 0 TO 100 PSI PRESSURE TRANSDUCERS SenSym ICT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCD9N60NTM N-Channel MOSFET FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features • RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Ultra Low Gate Charge (Typ.Qg = 17.8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant SupreMOSTM February 2010 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process control, SupreMOS provide world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.