ASDX005 Overview
Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process control, SupreMOS provide world class Rsp, superior switching performance and ruggedness.
Key Features
- RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A
- Ultra Low Gate Charge ( = 17.8nC)
- Low Effective Output Capacitance
- 100% Avalanche Tested
- RoHS Compliant SupreMOSTM February 2010
