RT2N05M Datasheet | Isahaya Electronics Corporation

DESCRIPTION RT2N05M is posite transistor with built-in bias resistor. FEATURE Built-in bias resistor (R1=47kΩ, R2=47kΩ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit 2.0 0.65 0.65 RT2N05M posite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING 2.1 ① ⑤ ② ③ ④ Unit：mm 0.9 0.65 0～0.1 ⑤ ④ RTr1 RTr2 R1 R2 R2 R1 TERMINAL CONNECTOR ①：BASE1 ②：EMITTER（MON） ③：BASE2 ④：COLLECTOR2 ⑤：COLLECTOR1 JEITA：SC-88A JEDEC：－ ① ②③ MAXIMUM RATING(Ta=25℃)(RTr1, RTr2 MON) SYMBOL VCBO VEBO VCEO VIN IC ICM PT Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Input voltage Collector current Peak Collector current Total dissipation Junction temperature Storage temperature RATING 50 10 50 40 100 200 200 ＋150 -55～＋150 UNIT V V V V m A m A m W ℃...