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RT3A66M - Silicon PNP Dual Transistor

General Description

RT3A66M is a sillicon PNP epitaxial type dual transistor.

It is designed for differential amplify application.

High Vceo Vceo=-150V Good two elements characteristics hFE1/hFE2=1.0 typ ｜VBE1-VBE2｜=2mV typ ① ② ③ 2.1 1.25 ⑥ ⑤ ④ Unit：mm 2.0 0.65 0.65 APPLICATION

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PRPREELILMINIAMRY INARY Notice：This is not a final specification Some parametric are subject to change. RT3A66M Dual Transistor For Differential Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION RT3A66M is a sillicon PNP epitaxial type dual transistor. It is designed for differential amplify application. OUTLINE DRAWING FEATURE ●High Vceo Vceo=-150V ●Good two elements characteristics hFE1/hFE2=1.0 typ ｜VBE1-VBE2｜=2mV typ ① ② ③ 2.1 1.25 ⑥ ⑤ ④ Unit：mm 2.0 0.65 0.65 APPLICATION For differential amplify application. 0.13 0.24 0.9 0.7 0～0.1 Tr1 Tr1 Tr2 Tr2 TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 JEDEC：－ MAXIMUM RATING (Ta=25℃) (Tr1 , Tr2.