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RT3C66M - Silicon NPN Dual Transistor

General Description

RT3C66M is a sillicon NPN epitaxial type dual transistor.

It is designed for differential amplify application.

High Vceo Vceo=160V Good two elements characteristics hFE1/hFE2=1.0 typ ｜VBE1-VBE2｜=2mV typ 2.0 0.65 0.65 ① ② ③ 2.1 1.25 ⑥ ⑤ ④ Unit：mm APPLICATION

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PRPREELILMINIAMRY INARY Notice：This is not a final specification Some parametric are subject to change. RT3C66M Dual Transistor For Differential Amplify Application Silicon Npn Epitaxial Type DESCRIPTION RT3C66M is a sillicon NPN epitaxial type dual transistor. It is designed for differential amplify application. OUTLINE DRAWING FEATURE ●High Vceo Vceo=160V ●Good two elements characteristics hFE1/hFE2=1.0 typ ｜VBE1-VBE2｜=2mV typ 2.0 0.65 0.65 ① ② ③ 2.1 1.25 ⑥ ⑤ ④ Unit：mm APPLICATION For differential amplify application. 0.13 0.24 0.9 0.7 0～0.1 TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 Tr1 ③：COLLECTOR2 ④：EMITTER2 Tr2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 JEDEC：－ MAXIMUM RATING (Ta=25℃) (Tr1 , Tr2.