Datasheet Summary
PRELIMINARY
Notice：This is not a final specification Some parametric are subject to change.
<SMALL-SIGNAL TRANSISTOR>
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA6006AS1 is a silicon PNP transistor. It is designed with high voltage.
FEATURE
- Small package for easy mounting.
- High voltage VCEO = -150V
- Low voltage VCE(sat) = -0.5V(MAX)
- plementary ： INC6006AS1
APPLICATION
High voltage switching.
OUTLINE DRAWING
UNIT：ｍｍ
7.5MAX
14.0 13.0MIN 3.0
1.0 1.0
0.1 0.45 2.5 2.5
①②③
TERMINAL CONNECTOR ①：EMITTER ②：COLLECTOR ③：BASE
JEITA：JEDEC：-
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
VCBO Collector to Base voltage VEBO Emitter...