INA6006AP1 Datasheet | Isahaya Electronics Corporation

DESCRIPTION INA6006AP1 is a silicon PNP transistor. It is designed with high voltage. FEATURE - Small package for easy mounting. - High voltage VCEO = -150V - Low voltage VCE(sat) = -0.5V(MAX) - plementary ： INC6006AP1 APPLICATION High voltage switching. 1.0 2.5 3.9 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING 4.4 1.6 UNIT：ｍｍ ③②① 0.5 0.4 1.5 3.0 0.4 MARKING TERMINAL CONNECTOR ①：BASE ②：COLLECTOR ③：EMITTER JEITA：SC-62 JEDEC：SOT-89 MAXIMUM RATING（Ta=25℃） SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature ELECTRICAL CHARACTERISTICS（Ta=25℃） RATING -160 -5 -150 -100 -200 500 ＋150 -55～＋150 UNIT V V V m A m A m W ℃ ℃ SYMBOL PARAMETER TEST CONDITIONS V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO h FE1 h FE2 h FE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on) f T Cob C to B breakdown voltage E to B breakdown voltage C to E breakdown voltage Collector cut off current Emitter cut off current DC forward current gain1 DC forward current gain2 DC forward current gain3 C to E saturation voltage1 C to E saturation voltage2 B to E saturation voltage1 B to E saturation voltage2 B to E on voltage Gain bandwidth product Collector output capacitance IC=-100μA，IE=0m A IE=-10μA，IC=0m A IC=-1m A，RBE=∞ VCB=-120V，IE=0m A VEB=-3V，IC=0m A VCE=-5V，IC=-1m A VCE=-5V，IC=-10m A VCE=-5V，IC=-50m A IC=-10m A，IB=-1m A IC=-50m A，IB=-5m A IC=-10m A，IB=-1m A IC=-50m A，IB=-5m A VCE=-5V，IC=-10m A VCE=-10V，IE=10m A VCB=-10V，IE=0m A，f=1MHz MARKING Type Name LOT № h FE...