INA1001AC1-TH50 Datasheet | Isahaya Electronics Corporation

DESCRIPTION INA1001AC1 is a silicon PNP epitaxial type transistor. It is designed with high collector current and small VCE(sat). OUTLINE DRAWING 0.65 1.5 0.65 UNIT：mm 2.8 1.90 0.95 0.95 FEATURE - Super mini package for easy mounting - High collector current(IC=-500m A) - Low collector saturation voltage (VCE（sat）<-0.3Vmax；IC=-100m A、IB=-10m A) - High voltage VCEO=-80V ① ② ③ 1.1 0.8 0～0.1 0.13 APPLICATION Power supply, Relay drive MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature Terminal Connector ①：Base ②：Emitter ③：Collector JEITA:SC-59 JEDEC: Similar to TO-236 RATING -80 -4 -80 -500 200...