INC5002AP1
DESCRIPTION
INC5002AP1 is a silicon NPN epitaxial transistor designed for relay drive or Power supply application.
FEATURE
- Small package for easy mounting.
- High voltage VCEO=60V
- High collector current IC=3A
- Low VCE(sat) VCE（sat）=0.6V max（@IC=3A/ IB=300m A）
- High collector dissipation PC=500m W
APPLICATION
DC･DC converter, Relay drive, Motor drive
1.0 2.5 3.9
For low frequency power amplify Silicon NPN Epitaxial
OUTLINE DRAWING
4.4 1.6
UNIT：ｍｍ
③②①
0.5 0.4
1.5 3.0
0.4 MARKING
TERMINAL CONNECTOR ①：BASE ②：COLLECTOR ③：EMITTER
JEITA：SC-62 JEDEC：SOT-89
MAXIMUM RATING（Ta=25℃）
SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg
PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature
RATING 80 6 60 3 6 500
＋150 -55～＋150
UNIT V V V
A m W ℃ ℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
V(BR)CBO V(BR)EBO V(BR)CEO
ICBO IEBO h FE...
