INC5002AP1-TH51 Datasheet | Isahaya Electronics Corporation

DESCRIPTION INC5002AP1 is a silicon NPN epitaxial transistor designed for relay drive or Power supply application. FEATURE - Small package for easy mounting. - High voltage VCEO=60V - High collector current IC=3A - Low VCE(sat) VCE（sat）=0.6V max（@IC=3A/ IB=300m A） - High collector dissipation PC=500m W APPLICATION DC･DC converter, Relay drive, Motor drive 1.0 2.5 3.9 For low frequency power amplify Silicon NPN Epitaxial OUTLINE DRAWING 4.4 1.6 AEC-Q101 pliance UNIT：ｍｍ ③②① 0.5 0.4 1.5 3.0 0.4 MARKING TERMINAL CONNECTOR ①：BASE ②：COLLECTOR ③：EMITTER JEITA：SC-62 JEDEC：SOT-89 MAXIMUM RATING（Ta=25℃） SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RATING 80 6 60 3 6 500 ＋150 -55～＋150 UNIT V V V A m W ℃ ℃ ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL PARAMETER V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO h FE VCE(sat) f T Cob C to B breakdown voltage E to B breakdown voltage C to E breakdown voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product Collector output capacitance TEST CONDITIONS IC=100μA，IE=0m A IE=100μA，IC=0m A IC=1m A，RBE=∞ VCB=60V，IE=0m A VEB=4V，IC=0m A VCE=2V，IC=0.5A IC=3A，IB=300m A VCE=5V，IE=-100m A VCB=10V，IE=0m A，f=1MHz MARKING Type...