INK021AAP1
DESCRIPTION
INK021AAP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable machinery , because voltage drive and low on resistance.
OUTLINE DRAWING 4.4 1.6
UNIT：ｍｍ
FEATURE
- Input impedance is high, and not necessary to consider a drive electric current.
- High drain current ID=2A
- Drive voltage 4V
- Low on Resistance. RDS(on)=0.20Ω(TYP).
- High speed switching.
- Small package for easy mounting.
FEATURE
Switching
1.0 2.5 3.9
③②①
0.5 0.4
1.5 3.0
TERMINAL CONNECTOR ①：GATE ②：DRAIN ③：SOURCE
MARKING JEITA：SC-62 JEDEC：SOT-89
MAXIMUM RATINGS（Ta=25℃）
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(DC) Drain Current(Pulse) (※1) Total Power Dissipation (※2)
Symbol VDSS VGSS
ID IDP PD
Rating Unit
±20
EQUIVALENT CIRCUIT D
Channel Temperature
Tch
+150
℃
Storage Temperature
Tstg
-55～+150 ℃
※1：Single pulse,...
