ISA1602AM1 Datasheet | Isahaya Electronics Corporation

DESCRIPTION ISA1235AC1 ISA1602AM1 is super mini package resin sealed silicon PNP epitaxial type transistor. These are designed for low frequency voltage amplify application . ISA1235AC1 2.5 1.5 OUTLINE DRAWING ISA1602AM1 2.1 0.425 1.2 0.425 0.4 2.0 1.3 0.65 0.65 UNIT：mm 2.9 1.9 0.95 0.95 FEATURE - Excellent linearity of DC forward current gain. - Small collector to emitter saturation voltage VCE(sat)=-0.3Vmax ① ② ③ ① ② ③ APPLICATION For small type machine low frequency voltage amplify application. 0～0.1 JEITA：SC-59 JEDEC：TO-236 resemblance TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR 0～0.1 JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR MAXIMUM RATINGS（Ta=25℃） Symbol ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ ＰＣ Ｔｊ Ｔｓｔｇ Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings ISA1235AC1 ISA1602AM1 -60 -6 -50 -200 200 +150 -55～+150 UNIT V V V m A m W ℃ ℃ MARKING . MF h FE ITEM ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ Ｉ EＢＯ ｈＦＥ- ｈＦＥ ＶＣＥ（ｓａｔ） ｆＴ Cob NF Parameter Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain bandwidth product Collector output capacitance Noise Figure Test conditions I C=-100μA，RBE=∞ VCB=-60V，I E =0 VEB=-6V，I C =0 VCE=-6V，I C =-1m A VCE=-6V，I C =-0.1m A I C =-100m A，I B =-10m A VCE=-6V，I E =10m A VCB=-6V，I E =0,f=1MHz VCE=-6V，I E =0.3m A， f=100Hz，RG=10kΩ Min -50 Limits Ave Max -0.1 -0.1 500 -0.3 200 4.0 20 E 150～300 UNIT V μA μA － － V MHz p F d B F 250～500 150 90 - ：It shows h FE classification in below table. ｈFE ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISA1235AC1 ISA1602AM1 .. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL...