• Part: RT1P137P
  • Description: Silicon PNP Epitaxial Type Transistor
  • Category: Transistor
  • Manufacturer: Isahaya Electronics Corporation
  • Size: 266.54 KB
Download RT1P137P Datasheet PDF
Isahaya Electronics Corporation
RT1P137P
DESCRIPTION RT1P137P is a one chip transistor with built-in bias resistor, NPN type is RT1N137P. FEATURE Built-in bias resistor (R1=1kΩ, R2=22kΩ) High collector current (IC=-1A) Low VCE(sat) VCE(sat)=-0.3V (@IC=-300m A/IB=-3m A) APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit OUTLINE DRAWING 4.4 1.6 ③②① 0.5 0.4 1.5 3.0 1.0 2.5 3.9 Unit: mm 0.4 MARKING R1 B (IN) R2 C (OUT) E (GND) JEITA:SC-62 JEDEC:SOT-89 Terminal Connector ①:BASE ②:COLLECTOR ③:EMITTER MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Junction temperature Storage temperature RATING -40 -6 -40 -1 -2 500 +150 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃) UNIT V V V A A m W ℃ ℃ SYMBOL V(BR)CEO ICBO IEBO h FE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 f T PARAMETER C to E breakdown voltage Collector cut off current Emitter...