RT1P137S
DESCRIPTION
RT1P137S is a one chip transistor with built-in bias resistor, NPN type is RT1N137S.
OUTLINE DRAWING
FEATURE
Built-in bias resistor (R1=1kΩ, R2=22kΩ) High collector current (IC=-1A) Low VCE(sat) VCE(sat)=-0.3V
(@IC=-300m A/IB=-3m A)
APPLICATION
Inverted circuit, Switching circuit, Interface circuit, Driver circuit
13.0MIN
1.0 1.0
0.1 0.45 2.5 2.5
①②③
0.4 7.5MAX
Unit: mm
R1 B (IN)
R2
C (OUT)
E (GND)
JEITA:- JEDEC:- Terminal Connector
①:EMITTER ②:COLLECTOR ③:BASE
MAXIMUM RATING (Ta=25℃)
SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg
PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Junction temperature Storage temperature
RATING -40 -6 -40 -1 -2 600 +150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
UNIT V V V A A m W ℃ ℃
SYMBOL
V(BR)CEO ICBO IEBO h FE
VCE(sat) VI(ON) VI(OFF)
R1 R2/R1 f T
PARAMETER
C to E breakdown voltage Collector cut off current...