• Part: RT1P137S
  • Description: Silicon PNP Epitaxial Type Transistor
  • Category: Transistor
  • Manufacturer: Isahaya Electronics Corporation
  • Size: 274.58 KB
Download RT1P137S Datasheet PDF
Isahaya Electronics Corporation
RT1P137S
DESCRIPTION RT1P137S is a one chip transistor with built-in bias resistor, NPN type is RT1N137S. OUTLINE DRAWING FEATURE Built-in bias resistor (R1=1kΩ, R2=22kΩ) High collector current (IC=-1A) Low VCE(sat) VCE(sat)=-0.3V (@IC=-300m A/IB=-3m A) APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit 13.0MIN 1.0 1.0 0.1 0.45 2.5 2.5 ①②③ 0.4 7.5MAX Unit: mm R1 B (IN) R2 C (OUT) E (GND) JEITA:- JEDEC:- Terminal Connector ①:EMITTER ②:COLLECTOR ③:BASE MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Junction temperature Storage temperature RATING -40 -6 -40 -1 -2 600 +150 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃) UNIT V V V A A m W ℃ ℃ SYMBOL V(BR)CEO ICBO IEBO h FE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 f T PARAMETER C to E breakdown voltage Collector cut off current...