RT3P66M Datasheet | Isahaya Electronics Corporation

.Data Sheet.co.kr PRELIMINARY RT3P66M posite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3P66M is a posite transistor built with RT1P430 chip and RT1P430 chip in SC-88 package. OUTLINE DRAWING 2.1 1.25 ‡@ 0.65 ‡A ‡B ‡E ‡D ‡C 0.2 Unit - F mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.65 0.13 0- `0.1 ‡E RTr1 ‡D R1 R2 RTr2 ‡C R1 ‡A TERMINAL CONNECTOR ‡@ - F EMITTER1 ‡A - F BASE1 ‡B - F COLLECTOR2 ‡C - F EMITTER2 ‡D - F BASE2 ‡E :COLLECTOR1 JEITA- F SC-88 0.9 ‡@ ‡B MAXIMUM RATING (Ta=25 - Ž) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation - i Total, Ta=25- Ž - j Junction temperature Storage temperature RATING -50 -6 -50 -100 -200 150 - {150 -55- `- { 150 UNIT V V V m A m A m W - Ž - Ž ‡E ‡D...