RT3P66U Datasheet | Isahaya Electronics Corporation

.Data Sheet.co.kr PRELIMINARY RT3P66U posite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3P66U is a posite transistor built with two RT1P430 in USM6F package. OUTLINE DRAWING 1.6 ±0.05 1pin ﾏｰｸ 1.2 ±0.05 Unit：mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting 1.6 ±0.05 1. 0 0.5 0.5 (0.5) (0.95) (0.5) 0.2 ±0.05 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit (Φ0.1 ～0.2) ※ 0.5 ±0.05 0.12 ±0.05 ⑥ RTr ⑤ R1 ④ RTr ① R1 ② ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：－ ISAHAYA：USM6F MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation（Total, Ta=25℃） Junction temperature Storage temperature RATING -50 -6 -50 -100 -200 125 ＋150 -55～＋150 UNIT V V V m A m A m W ℃ ℃ １ 2 3 6 5...