RTAN430M - TRANSISTOR

This page provides the datasheet information for the RTAN430M, a member of the RTAN430x TRANSISTOR family.

Isahaya

Datasheet Details

Part number	RTAN430M
Manufacturer	Isahaya
File Size	150.76 KB
Description	TRANSISTOR
Datasheet	RTAN430M Datasheet
Additional preview pages of the RTAN430M datasheet.

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Other Datasheets by Isahaya

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Full PDF Text Transcription

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ＲＴＡＮ４３０Ｘ SERIES TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE FEATURE Built-in bias resistor (R1=4.7kΩ) Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA） Low on Resistance Ron=0.80Ω(TYP.)（@VI=5V） APPLICATION muting circuit , switching circuit OUTLINE DRAWING RTAN430T2 (PRELIMINARY) 0.2 0.8 0.2 Unit：mm RTAN430M 2.1 0.425 1.25 0.425 0.25 2.0 1.3 0.65 0.65 0.3 ① ②③ ① ②③ 1.2 0.8 0.4 0.4 0.9 0.7 0～0.1 0.15 0.5 EQUIVALENT CIRCUIT R1 B (IN) C (OUT) E (GND) JEITA, JEDEC：－ ISAHAYA：T-USM TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR RTAN430U 1.6 0.4 0.8 0.4 ① ②③ JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR RTAN430C 2.5 0.5 1.5 0.

Published: Aug 5, 2019 |