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ＲＴＡＮ４３０Ｘ SERIES
TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION
SILICON NPN EPITAXIAL TYPE
FEATURE
Built-in bias resistor (R1=4.7kΩ) Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage.
VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA） Low on Resistance
Ron=0.80Ω(TYP.)（@VI=5V）
APPLICATION
muting circuit , switching circuit
OUTLINE DRAWING
RTAN430T2 (PRELIMINARY)
0.2 0.8 0.2
Unit：mm
RTAN430M
2.1 0.425 1.25 0.425
0.25 2.0 1.3 0.65 0.65
0.3
① ②③
① ②③
1.2 0.8 0.4 0.4
0.9 0.7 0～0.1 0.15
0.5
EQUIVALENT CIRCUIT
R1 B (IN)
C (OUT)
E
(GND)
JEITA, JEDEC：－ ISAHAYA：T-USM TERMINAL CONNECTOR
①：BASE ②：EMITTER ③：COLLECTOR
RTAN430U
1.6 0.4 0.8 0.4
①
②③
JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR
①：BASE ②：EMITTER ③：COLLECTOR
RTAN430C
2.5 0.5 1.5 0.
RTAN430T2 Datasheet
