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2SA1160 Datasheet PDF

JCET 2SA1160

PNP Transistor

Part No. 2SA1160
Datasheet 2SA1160 Download
Manufacturer
JCET
Description PNP Transistor
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2SA1160 datasheet page 1 preview

FEATURES

z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage TO – 92L 1. EMITTER 2. COLLECTOR 3. BASE

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -20 -10 -6 -2 900 139 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol Test conditions