JCET 2SA1585S
PNP Transistor
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 12 3 Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature Range Value -20 -20 -6 -2 400 150 -55-150 Unit V V V A mW ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Pa rameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol Test conditions V(BR)CBO IC= -50μA , IE=0 V(BR)CEO IC= -1mA , IB=0 V(BR)EBO IE=- 50μA, IC=0 ICBO VCB=-20V , IE=0 IEBO VEB= -5V , IC=0 hFE VCE=-2V, IC= -0.1A VCEsat fT IC= -2A, IB=-0.1A VCE=-2V, IC=-0.5A F=100MHz Min Typ Max -20 -20 -6 -0.1 -0.1 120 560 -0.5 240 Unit V V V μA μA V MHz CLASSIFICATION OF hFE Rank Ra nge Q 120-170 R 180-390 S 270-560 1 (,Jul,2016 Symbol A A1 b b1 c D D1 E e e1 L θ Dimensions In Millimeters Min.