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2SA1585S - PNP Transistor

Key Features

  • 1) Low VCE(sat). VCE(sat) =.
  • 0.2V (Typ. ) (IC/IB =.
  • 2A /.
  • 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. zStructure Epitaxial planar type PNP silicon transistor zExternal dimensions (Unit : mm) 2SB1424 4.5+.
  • 00..12 1.6±0.1 1.5±0.1 2SA1585S 4±0.2 2±0.2 3±0.2 0.5±0.1 3Min. (15Min. ) 4.0±0.3 2.5.
  • +00..12 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4.
  • +00..015 ROHM : MPT3.

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Datasheet Details

Part number 2SA1585S
Manufacturer ROHM
File Size 59.54 KB
Description PNP Transistor
Datasheet download datasheet 2SA1585S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SB1424 / 2SA1585S Low VCE(sat) Transistor (−20V, −3A) 2SB1424 / 2SA1585S zFeatures 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. zStructure Epitaxial planar type PNP silicon transistor zExternal dimensions (Unit : mm) 2SB1424 4.5+−00..12 1.6±0.1 1.5±0.1 2SA1585S 4±0.2 2±0.2 3±0.2 0.5±0.1 3Min. (15Min.) 4.0±0.3 2.5−+00..12 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4−+00..015 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ∗ Denotes hFE ∗ Abbreviated symbol: AE 0.45+−00..0155 2.5+−00..14 5 0.5 0.45+−00..