Datasheet4U Logo Datasheet4U.com

2SA1585S-R - PNP Plastic-Encapsulate Transistors

Download the 2SA1585S-R datasheet PDF. This datasheet also covers the 2SA1585S variant, as both devices belong to the same pnp plastic-encapsulate transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • es Power dissipation: PD = 0.4W(Tamb=25ć) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -20V Operating and storage junction temperature range TJ, Tstg: -55ć to + 150ć Parameter Collector-Emitter Voltage (IC=-50­A, IE=0) Collector-Base Voltage (IC=-1­A, IB=0) Emitter-Base Voltage (IE=-50­A, IC=0) Collector cut-off Current (VCB=-20V, IE=0) Emitter cut-off Current (VEB=-5V, IC=0) DC current gain (VCE=-2V, IC=-0.1A) Collector-Emitter Saturation Voltage (IC=-2A, IB=-0.1A) Transitio.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SA1585S_MCC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1585S PNP Transistor Rohm
2SA1585S Plastic-Encapsulated Transistors TRANSYS Electronics
2SA1585 Silicon PNP transistor BLUE ROCKET ELECTRONICS
2SA1585 PNP Silicon Epitaxial Planar Transistor CHINA BASE
2SA1585 PNP Silicon Epitaxial Planar Transistor SEMTECH

Other Datasheets by Micro Commercial Components

Part Number Description
2SA1585S-Q PNP Plastic-Encapsulate Transistors
2SA1585S PNP Plastic-Encapsulate Transistors
2SA1576A-Q PNP Transistors
2SA1576A-R PNP Transistors
2SA1576A-S PNP Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1585S 2SA1585S-Q 2SA1585S-R PNP Plastic-Encapsulate Transistors • • • • Features Power dissipation: PD = 0.4W(Tamb=25ć) Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -20V Operating and storage junction temperature range TJ, Tstg: -55ć to + 150ć Parameter Collector-Emitter Voltage (IC=-50­A, IE=0) Collector-Base Voltage (IC=-1­A, IB=0) Emitter-Base Voltage (IE=-50­A, IC=0) Collector cut-off Current (VCB=-20V, IE=0) Emitter cut-off Current (VEB=-5V, IC=0) DC current gain (VCE=-2V, IC=-0.1A) Collector-Emitter Saturation Voltage (IC=-2A, IB=-0.1A) Transition Frequency (VCE=2.0Vdc, IC=0.5Adc) Min -20 -20 -6.