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ST 2SA1585
PNP Silicon Epitaxial Planar Transistor
The transistor is subdivided into two groups, Q and R, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current (PW = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO
-IC -ICP Ptot Tj Tstg
1. Emitter 2. Collector 3.