Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
Features
TRANSISTOR (PNP) z Low VCE(sat) z Excellent DC current gain characteristics. Power dissipation
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
SOT-23
1. BASE 2.EMITTER 3. COLLECTOR
Symbol
Parameter
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Power Dissipation
Tj Junction Temperature
Tstg Storage Temperature Range
Value -20 -20 -6 -2 350 150
-55~150
Unit V V V A mW ℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-b...
