JCET 2SA1980
PNP Transistor
FEATURES
z Low collector saturation voltage: VCE(sat) =-0.3V(Max.) z Low output capacitance : Cob =4pF (Typ.) z Complementary pair with 2SC5343 TO-92 1. EMITTER 2. COLLECTOR 3. BASEMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -150 PC Collector Power Dissipation 625 Tj Junction Temperature 150 Tstg Storage Temperature -55-150ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 Collector cut-off current ICBO VCB=-50V,IE=0 Collector cut-off current ICEO