SeCoS Halbleitertechnologie GmbH 2SA1980
PNP Transistor
| Part No. | 2SA1980 |
|---|---|
| Datasheet | 2SA1980 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
Low collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.) Complements of the 2SC5343 G H TO-92 J CLASSIFICATION OF hFE Product-Rank Range 2SA1980-O 70~140 2SA1980-Y 120~240 2SA1980-G 200~400 2SA1980-L 300~700 K 1 Emitter 2 Collector 3 Base D A B REF. A B C D E F G H J K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector 2 3Base 1 EmitterABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating -50 -50 -5 -150 625 150, -55~150 Unit V V V mA mW ° CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector C...