Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1132 TRANSISTOR (PNP)
Features z Low VCE(sat) z pliments 2SD1664
SOT-89-3L
1. BASE 2. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. EMITTER
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Continuous Collector Current
ICPPulsed Collector Current
PC Collector Power Dissipation
TJ Junction Temperature
Tstg Storage Temperature
Value -40 -32 -5 -1
-2 500 150 -55~150
Unit V V V A
A mW
℃
℃
6LQJOHSXOVH,3: PV
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
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