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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SB1658 TRANSISTOR (PNP)
TO – 126
FEATURES z Low VCE(sat) z High DC Current Gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -30 -30 -6 -5 1 125 150
-55~+150
1. EMITTER
2. COLLECTOR
3.
2SB1658 Datasheet
