Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SB624 TRANSISTOR (PNP)
Features z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) z plimentary to 2SD596.
SOT-23
1.BASE 2.EMITTER 3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-30 V
VCEO
Collector-Emitter Voltage
-25 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-700 mA
PD Total Device Dissipation
200 mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise...
