FEATURES
High DC Current Gain: hFE=100-320 TO-92L 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value 30 30 5 1 0.75 150 -55-150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5V Collector cut-off current ICBO VCB=30V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA DC current gain hFE(1) hFE(2) VCE=2V,IC=100mA
JCET