Toshiba 2SC2703
Silicon NPN TRANSISTOR
| Part No. | 2SC2703 |
|---|---|
| Datasheet | 2SC2703 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
2SC2703 Unit: mm● High DC current gain: hFE = 100 to 320
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 5 1 0.1 900 150 −55 to 150 Unit V V V A A mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 30 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA hFE (1) (Note) VCE = 2 V, IC = 100 mA hFE (2) VCE (sat) VBE fT Cob VCE = 2 V, IC = 800 mA IC = 800 mA, IB = 80 mA VCE = 2 V, IC = 800 mA VCE = 2 V, IC = 100 mA VCB = 10 V, f = 1 MHz Note: hFE (1) classification O: 100 to 200, Y: 160 to 320 JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Min Typ.
