JCET 2SD1899
NPN Transistor
FEATURES
z Low VCE(sat) z High Transition FrequencyMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 60 60 7 3 1 125 150 -55~+150 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V A W ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IEBO hFE(1)* hFE(2)* hFE(3)* VCE(sat)* VBE(sat)* Col