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2SD1899 - NPN Epitaxial Planar Silicon Transistors

Key Features

  • z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SD1899.

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NPN Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SD1899 ORDERING INFORMATION Type No. Marking 2SD1899 1899 SOT-89 Package Code SOT-89 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base current Collector Power Dissipation Tj ,Tstg Junction and Storage temperature range Note1:Mounted on ceramic substrate(250mm2*0.8t) 60 60 7 3 5 0.5 0.5 1.3 Note1 -55 to +150 V V V A A A W ℃ E127 Rev.A www.gmicroelec.