Galaxy Century Microelectronics 2SD1899
NPN Epitaxial Planar Silicon Transistors
| Part No. | 2SD1899 |
|---|---|
| Datasheet | 2SD1899 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
FEATURES
● High hFE● Low VCE(sat0 VCE(sat)≤0.3V Product Specification 2SD1899 ORDERING INFORMATION Type No. 2SD1899 Marking 1899 SOT-89 Package Code SOT-89 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 60 V 60 V VEBO IC ICP IB PC Emitter-Base Voltage Collector Current Collector Power Dissipation Base current Collector Power Dissipation Tj ,Tstg Junction and Storage temperature range Note1: Mounted on ceramic substrate(250mm2*0.8t) 7 V 3 A 5 A 0.5 A 0.5 W 1.3 Note1 -55 to +150 ℃ STM0097A: December 2018 1 Product Specification NPN Epitaxial Planar Silicon Transistors 2SD1899
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage VCBO IC=10uA,IE=0 60 Collector-emitter breakdown voltage VCEO IC=1mA,IB=0 60 Emitter-base breakdown voltage VEBO IE=10uA,IC=0 7 Collector cut-off current ICBO VCB=6...
