Datasheet Details
| Part number | 2SD1899 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.70 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1899-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1899 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.70 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1899-InchangeSemiconductor.pdf |
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·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation 3 A 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1899 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1899 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 150mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 1.5A;
Compare 2SD1899 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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