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3CG751 Datasheet PDF

JCET 3CG751

PNP Transistor

Part No. 3CG751
Datasheet 3CG751 Download
Manufacturer
JCET
Description PNP Transistor
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3CG751 datasheet page 1 preview

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit 3.BASE VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance V(BR)CBO IC= -100µA, IE=0 -30 V(BR)CEO IC= -1 mA , IB=0 -30 V(BR)EBO IE= -100µA , IC=0 -5 ICBO VCB= -30 V, IE=0 IEBO VEB= -5V, IC=0 hFE VCE=-2 V, IC= -500mA 100 VCE(sat) IC= -1.5 A, IB= -30mA fT VCE= -5V, IC= -100mA 50 Cob VCB=-10V,IE=0,f=1MHz Max Unit V V V -0.1 µA -0.1 µA 400 -2 V MHz 80 pF CLASSIFICATION OF...