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3CG751 - SILICON PNP TRANSISTOR

Key Features

  • . Excellent high current linearity, low saturation voltage. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -30 V VEBO -5.0 V IC -1.5 A PC 0.9 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol ICBO IEBO hFE VCE(sat) fT Cob Test condition VCB=-30V VEB=-5.0V VCE=-2.0V IC=-1.5A VCE=-5.0V VCB=-10V IE=0 IE=0 IC=0 IC=-0.5A IB=-30mA IC=-0.1A f=1.0MHz Min 100 50 Rating Typ Max -0.1 -0.1 400 -2.0 80 Unit μA μA V MHz pF.

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Datasheet Details

Part number 3CG751
Manufacturer LZG
File Size 164.47 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG751 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3CG751 PNP /SILICON PNP TRANSISTOR : 。 Purpose: High frequency low power amplifier applications. :,。 Features:. Excellent high current linearity, low saturation voltage. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -30 V VEBO -5.0 V IC -1.5 A PC 0.9 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol ICBO IEBO hFE VCE(sat) fT Cob Test condition VCB=-30V VEB=-5.0V VCE=-2.0V IC=-1.5A VCE=-5.0V VCB=-10V IE=0 IE=0 IC=0 IC=-0.5A IB=-30mA IC=-0.1A f=1.0MHz Min 100 50 Rating Typ Max -0.1 -0.1 400 -2.0 80 Unit μA μA V MHz pF hFE /hFE Classifications: O:100～240 Y:150～400 FOSHAN BLUE ROCKET ELECTRONICS CO., LTD. 3CG751 FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.