JCET BAW56T
Switching Diode
FEATURES
z Fast Switching Speed z For General Purpose SwitchingAPPLICATIONS
z High Conductance BAW56T BAV70 T BAV99T SOT-523 MARKING:JD JD MARKING:JJ JJ MARKING:JE JE JD JJ JE Solid dot = Green molding compound device, if none, the normal deviceMAXIMUM RATINGS
@Ta=25℃ Parameter Reverse Voltage Forward Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Symbol VR IF IFSM PD RθJA TJ TSTG Limit 85 75 2.0 150 833 150 -55~+150ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse breakdown voltage V(BR) IR= 1μA Reverse voltage leakage current IR1 VR=75V IR2 VR=25V Forward voltage Diode capacitance Reverse recovery time IF=1mA VF IF=10mA IF=50mA IF=150mA CD VR=0 f=1MHz t rr IF=IR=10mA Irr=0.1×IR,RL=100Ω Min 85 Max 2 0.03 715 855 1000 1250 1.5 4 Unit V mA A mW ℃/W ℃ ℃ Unit V μA μA mV pF ns 1 B,Oct,2014 FORWARD CURRENT I (mA) F Typic...