NXP Semiconductors BAW56T
High-speed switching diodes
| Part No. | BAW56T |
|---|---|
| Datasheet | BAW56T Download |
| Manufacturer |  NXP Semiconductors |
| Description | High-speed switching diodes |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High switching speed: trr 4 ns● Low leakage current
● Small SMD plastic packages
● Low capacitance: Cd 2 pF
● Reverse voltage: VR 90 V
● AEC-Q101 qualified 1.3
APPLICATIONS
● High-speed switching● General-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions Min Typ VR = 80 V [1] - - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 0.5 90 4 Unit A V ns NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 2. Pinning information Table 3. Pinning Pin
DESCRIPTION
BAV756S 1 anode (diode 1) 2 cathode (diode 2) 3 common anode (diode 2 and diode 3) 4 cathode (diode 3) 5 anode (diode 4) 6 common cathode (diode 1 and diode 4) BAW56; BAW56T; BAW56W 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode BAW56M 1 2 3 cathode (diode 1) cathode (diode 2) common anode BAW56S 1 2 3 4 5 6 cathode (...
