Datasheet4U Logo Datasheet4U.com

CJB08N65 - N-Channel MOSFET

Datasheet Summary

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

📥 Download Datasheet

Datasheet preview – CJB08N65

Datasheet Details

Part number CJB08N65
Manufacturer JCET
File Size 1.03 MB
Description N-Channel MOSFET
Datasheet download datasheet CJB08N65 Datasheet
Additional preview pages of the CJB08N65 datasheet.

📁 Similar Datasheet

  • CJB1117-1.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJB1117-1.8 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJB1117-2.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJB1117-3.3 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJB1117-5.0 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJB1117-ADJ - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
Other Datasheets by JCET

Full PDF Text Transcription

Click to expand full text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB08N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX ID 1.4Ω@10V 8A TO-2-L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE  High Current Rating  Lower RDS(on)  Lower Capacitance  Lower Total Gate Charge  Tighter VSD Specifications  Avalanche Energy Specified 1. GATE 2. DRAIN 3.
Published: |