Full PDF Text Transcription for CJB08N65 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CJB08N65. For precise diagrams, and layout, please refer to the original PDF.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB08N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX ID 1.4Ω@10V 8A TO-2-L...
View more extracted text
BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX ID 1.4Ω@10V 8A TO-2-L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE High Current Rating Lower RDS(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified 1. GATE 2. DRAIN 3.
CJB08N65 Datasheet
