Datasheet Summary
-,$1- 68&+$1- -,$1- (/(&7521,&67(&+12/2- <&2/7'
72/3ODVWLF(QFDSVXODWH026)(76
&-%1 1&KDQQHO3RZHU026)(7
V(BR)DSS
RDS(on)MAX
9
Pȍ #9
$
'(6&5,37,21
The CJ%85N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and general purpose applications.
TO-2-L
1. GATE 2. DRAIN 3. SOURCE
)($785( z Advanced trench process technology z Special designed for convertors and power controls z High density cell design for ultra low RDS(on) z Fully characterized avalanche voltage and current...