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CJCD2005 - Dual N-Channel MOSFET

Description

excellent RDS(ON) and low gate charge.

It is ESD protected.

by its common-drain configuration.

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Datasheet preview – CJCD2005

Datasheet Details

Part number CJCD2005
Manufacturer JCET
File Size 702.91 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CJCD2005 Datasheet
Additional preview pages of the CJCD2005 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2005 V(BR)DSS   20V Dual N-Channel MOSFET RDS(on)MAX  13mΩ@10V 14mΩ @4.5V 15.5mΩ@3.8V 19 mΩ@2.5V 27mΩ@1.8V ID   8A   DFNWB2× -6L-C DESCRIPTION The CJCD2005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.
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