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CJCD2007 - Dual N-Channel MOSFET

Description

excellent RDS(ON) and low gate charge.

It is ESD protected.

by its common-drain configuration.

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Datasheet preview – CJCD2007

Datasheet Details

Part number CJCD2007
Manufacturer JCET
File Size 883.43 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CJCD2007 Datasheet
Additional preview pages of the CJCD2007 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2007 V(BR)DSS 20V Dual N-Channel MOSFET RDS(on)MAX 20 mΩ@10V  22 mΩ@4.5V 24mΩ@3.8V 26 mΩ@2.5V 35mΩ@1.8V ID 7A    DFNWB2×3-6L-C DESCRIPTION The CJCD2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.
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