CJL8810 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 Dual N-Channel MOSFET SOT-23-6L DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its mon-drain configuration. MARKING: MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) - Repetitive rating：Pluse width limited by junction temperature. Symbol VDS VGS ID IDM - RθJA Tj Tstg TL Value 20 ±12 7 30 83.3 150 -55~+150 260 Unit V V A A ℃/W ℃ ℃ ℃ D,Dec,2013 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V Gate-body leakage...