CJL8820 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8820 Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX 21mΩ@10V 24mΩ @4.5V 20V 28 mΩ@3.8V 7A 32mΩ@2.5V 50mΩ@1.8V DESCRIPTION The CJL8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its mon-drain configuration. MARKING: Equivalent Circuit SOT-23-6L MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) - Repetitive rating：Pluse width limited by junction temperature. Symbol VDS VGS ID - RθJA Tj Tstg TL .cj-elec. Value 20 ±12 7 25 125 150 -55~+150 260 Unit V V A A ℃/W ℃ ℃...