CJPF04N70 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS V(BR)DSS 700V N-Channel Power MOSFET RDS(on)MAX 2.8Ω@10V 4.4A TO-220F GENERAL DESCRIPTION This is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Reverse Transfer Capacitance z Ultra Low Gate Charge z Avalanche Energy Specified z High Switching Speed 1. GATE 2. DRAIN 3. SOURCE MARKING EQUIVALENT CIRCUIT CJPF04N70= Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum Lead Temperature for Soldering Purposes , 1/8”from Case for 5 Seconds Symbol VDS VGS ID IDM EAS RθJA TJ TSTG Value 700 ±30 4.4 17.6 260 62.5 150 -55 ~+150 Unit V A m J ℃/W ℃ .cj-elec. A-3,May,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test...